首页> 外国专利> PROCESS FOR THE PREPARATION OF STARTING RAW MATERIAL BASED ON SODIUM OR CESIUM IODIDE FOR THE GROWTH OF MONOCRYSTALS ON THEIR BASE

PROCESS FOR THE PREPARATION OF STARTING RAW MATERIAL BASED ON SODIUM OR CESIUM IODIDE FOR THE GROWTH OF MONOCRYSTALS ON THEIR BASE

机译:基于碘化钠或碘化铯的起始原料的制备方法,用于基于其的单晶的生长

摘要

The invention relates to the preparation of starting salts of sodium or cesium iodide for the growth of monocrystals on their base. A process for the preparation of the initial raw material based on sodium or cesium iodide for the growth of monocrystals on their base, comprising loading of the initial salt to the ampoule, its vacuuming, and after that the heating of salt by the constant vacuuming to temperature 420-450 °, the introduction to the ampoule with the initial salt of dry air with the further holding, ampoule vacuuming, the second pumping of the dry air, holding at temperature 420-450 ° and the second vacuuming. After the second vacuuming the pumping of carbon dioxide to the ampoule to the pressure of 200- of mercury, keeping the salt in the atmosphere of carbon dioxide for 15-20 minutes and the ampoule vacuuming are carried out. The use of the invention allows obtaining iodides of alkali metals, which do not contain hydroxyl groups, providing high scintillation characteristics and photochemical stability of monocrystals.
机译:本发明涉及碘化钠或碘化铯的起始盐的制备,以使单晶在其碱上生长。一种基于碘化钠或碘化铯的初始原料的制备方法,用于在其基础上生长单晶,包括将初始盐装载到安瓿中,抽真空,然后通过不断抽真空将盐加热至温度为420-450°,将具有干燥空气的初始盐的安瓿引入并进一步保持,安瓿抽真空,第二次干燥空气的抽吸,保持在420-450°的温度和第二次抽真空。在第二次抽真空之后,将二氧化碳泵送到安瓿中至200-汞柱的压力,将盐在二氧化碳气氛中保持15-20分钟,然后进行安瓿抽真空。本发明的使用允许获得不包含羟基的碱金属的碘化物,从而提供高的闪烁特性和单晶的光化学稳定性。

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