Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress

摘要

In a micro-electromechanical structure (1; 30; 60; 70) of semiconductor material, a detection structure (19; 31) is formed by a stator (5; 35; 61) and by a rotor (4; 34), which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure (24; 46) of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure (19; 31) thereby the micro-electromechanical structure (1; 30; 60; 70) supplies an output signal (ΔC, VOUT) correlated to the external stress and compensated in temperature.