PHASE CHANGE MEMORY DEVICE, WRITE METHOD THEREOF, AND SYSTEM INCLUDING THE SAME

摘要

One phase change memory device, its write method and a kind of system include the identical increase for being provided to writing speed and power consumption reduces the supply time for writing stream. One phase change memory device (100) includes a memory cell array (110), a control logic (150) and reading/writing circuit (140). Memory cell array is made of multiple phase-change memory cells, control logic writes data for a pair of the first recording impulse of the data in phase-change memory cell with non-volatile generate, and the second recording impulse is for the data in phase-change memory cell to writing data with non-volatile. Reading/writing circuit supplies one of first recording impulse and according to the second recording impulse of the control of control logic to phase-change memory cell.