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Production of an abrupt transitions in structural elements, with the use of the 'dopant snow plow effect' ('dopant snowplow effect') in the case of the silicide growth
Production of an abrupt transitions in structural elements, with the use of the 'dopant snow plow effect' ('dopant snowplow effect') in the case of the silicide growth
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机译:在硅化物生长的情况下,通过使用“掺雪犁效应”(“掺雪犁效应”)产生结构元素的突然转变
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摘要
A method of forming an abrupt junction device with a semiconductor substrate is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed on the gate dielectric. A sidewall spacer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. A thickening layer is formed by selective epitaxial growth on the semiconductor substrate adjacent the sidewall spacer. Raised source/drain dopant implanted regions are formed in at least a portion of the thickening layer. Silicide layers are formed in at least a portion of the raised source/drain dopant implanted regions to form source/drain regions, beneath the silicide layers, that are enriched with dopant from the silicide layers. A dielectric layer is deposited over the silicide layers, and contacts are then formed in the dielectric layer to the silicide layers.
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