silicon containing antireflektive beschichtungszusammensetzung, silicon containing antireflektive coating, substrate prozessierende interlayer and substrate prozessierende method

摘要

PROBLEM TO BE SOLVED: To improve a material system capable of ensuring a satisfactory etching ratio relative to an organic resist film, and to provide a silicon-containing antireflective film forming composition having a higher etching selectivity and capable of easily regulating physical properties required for a film, and to provide a silicon-containing antireflective film, and a substrate processing intermediate and a processed substrate processing method using the same.;SOLUTION: The composition for forming a silicon-containing antireflective film for use in a photolithography process using exposure light having a wavelength of ≤200 nm comprises a silicon-containing polymer obtained through hydrolytic condensation of a reaction liquid including at least one silicon-silicon bond-containing hydrolyzable silane compound represented by the formula (1): R_(6-m)Si₂X_m, wherein R is a monovalent hydrocarbon group; X is alkoxy, alkanoyloxy or halogen; and m is 3-6.;COPYRIGHT: (C)2007,JPO&INPIT