METHOD FOR PROMOTING SELF-FORMATION OF BLOCK COPOLYMER AND METHOD FOR FORMING SELF-FORMATION PATTERN OF BLOCK COPOLYMER USING THE METHOD FOR PROMOTING SELF-FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a method for upgrading the throughput of a block copolymer for self-formation by annealing it as used in creating a pattern of manufacturing process, etc. of a semiconductor device.;SOLUTION: First, a block copolymer layer 103 as a first film is formed on a base 101, then the block copolymer film 103 is annealed in an atmosphere of an inert gas, e.g. a neon or in a moistened atmosphere with a humidity of 30% or above. Thus, the self-formation of the block copolymer can be promoted.;COPYRIGHT: (C)2010,JPO&INPIT