首页> 外国专利> The ITO transparent electric conduction film forming a membrane in manufacturing method of the ITO transparent electric conduction film equipped substrate,

The ITO transparent electric conduction film forming a membrane in manufacturing method of the ITO transparent electric conduction film equipped substrate,

机译:在带有ITO透明导电膜的基板的制造方法中,形成膜的ITO透明导电膜,

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to reduce the resistance of an ITO transparent conductive membrane by film forming by a sputtering method at a temperature of 250°C or less when an organic polymer is used as a substrate, since there arises a problem that the shape of the substrate changes or the mechanical property and the electrical property change greatly by heating at film forming in the case of the substrate made of the organic polymer.;SOLUTION: This is a substrate with an ITO transparent conductive membrane in which the substrate has an organic polymer, the ITO transparent conductive membrane is made by adding 5-10 wt% of tin into indium oxide in oxide conversion, the specific resistance is in the range 1.2 × 10-4-3.0 × 10-4Ω cm, and the ITO transparent conductive membrane is formed by an ion plating method using a plasma gun. And the surface roughness of the ITO transparent conductive membrane is 2 nm or less. When the melting point Tm of the organic polymer forming the substrate is clear, the temperature of the substrate at the time of forming the ITO transparent conductive membrane is made in the temperature range Tg-(Tg+(Tm-Tg)/2) against the glass transition point Tg of the organic polymer.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:解决的问题:当使用有机聚合物作为基板时,为了解决难以通过在250℃以下的温度下通过溅射法进行成膜来降低ITO透明导电膜的电阻的问题,因为对于由有机聚合物制成的基板,会因成膜时的加热而导致基板的形状发生变化,或者机械性能和电气性能发生很大变化。;解决方案:这是一种具有ITO透明导电性的基板基材为有机聚合物的膜,通过将5〜10重量%的锡以氧化换算添加到氧化铟中而制成ITO透明导电膜,电阻率在1.2倍以上的范围内。 10 -4 -3.0× 10 -4 Ω然后,使用等离子枪通过离子镀法形成ITO透明导电膜。并且,ITO透明导电膜的表面粗糙度为2nm以下。当形成基板的有机聚合物的熔点Tm明确时,形成ITO透明导电膜时的基板温度相对于温度为Tg-(Tg +(Tm-Tg)/ 2)。有机聚合物的玻璃化转变温度Tg 。;版权所有:(C)2005,日本特许厅&日本化学工业学会

著录项

  • 公开/公告号JP4526248B2

    专利类型

  • 公开/公告日2010-08-18

    原文格式PDF

  • 申请/专利权人 セントラル硝子株式会社;

    申请/专利号JP20030282834

  • 发明设计人 高松 敦;荒木 正和;

    申请日2003-07-30

  • 分类号H01B13/00;C23C14/54;C23C14/32;H01B5/14;C23C14/08;

  • 国家 JP

  • 入库时间 2022-08-21 19:01:17

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号