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Method for Pulsed plasma deposition of titanium dioxide film

机译:脉冲等离子体沉积二氧化钛薄膜的方法

摘要

A method for pulsed plasma deposition of titanium dioxide film is revealed. The method includes the steps of: (1) set a substrate into a chamber and the chamber is pumped down to a certain vacuum level. (2) Introduce titanium tetraisopropoxide gas and gas containing oxygen into the chamber and a RF (radio frequency) pulse power supply is turned on to create a glow discharge for generating pulsed plasma. (3) A layer of titanium dioxide film is deposited on the substrate by the pulsed plasma. The TiO2 film is deposited on a substrate such as plastic substrate at low temperature according to the method so that the heat-resistant and conductive requirements of conventional substrates are removed.
机译:揭示了一种用于脉冲等离子体沉积二氧化钛膜的方法。该方法包括以下步骤:(1)将衬底放入腔室中,并将该腔室抽真空至一定真空度。 (2)将四异丙醇钛气体和含氧气体引入腔室,并打开RF(射频)脉冲电源以产生辉光放电,以产生脉冲等离子体。 (3)通过脉冲等离子体在基板上沉积二氧化钛膜层。根据该方法,将TiO 2 膜在低温下沉积在诸如塑料基板的基板上,从而消除了常规基板的耐热性和导电性要求。

著录项

  • 公开/公告号US2010075510A1

    专利类型

  • 公开/公告日2010-03-25

    原文格式PDF

  • 申请/专利权人 DER-JUN JAN;CHI-FONG AI;

    申请/专利号US20080237902

  • 发明设计人 DER-JUN JAN;CHI-FONG AI;

    申请日2008-09-25

  • 分类号H01L21/31;

  • 国家 US

  • 入库时间 2022-08-21 18:54:04

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