METHOD FOR FORMING ZINC OXIDE THIN FILM USING ATOMIC LAYER DEPOSITION, CAPABLE OF CHANGING ITS CHARACTERISTIC WITHOUT ADDITIONAL DOPING

摘要

PURPOSE: A method for forming zinc oxide thin film using atomic layer deposition is provided to control temperature so as to adjust the zinc oxide thin film's properties.;CONSTITUTION: A method for forming zinc oxide thin film using atomic layer deposition comprises the following steps of: injecting zinc source at 100°C or less; removing unreacted zinc source and byproducts; injecting oxygen source to react to the zinc source; and removing the unreacted oxygen source and byproducts. The zinc source includes diethyl zinc. The oxygen source includes water. A processing temperature is 70°C~100°C. If the processing temperature is lower than 70°C, resistance can increase. If the processing temperature is higher than 100°C, the zinc oxide thin film does not exhibit desired properties. The zinc source is injected at low pressure of about 1Torr.;COPYRIGHT KIPO 2010