HIGH FREQUENCY SWITCH WITH LOW LOSS, LOW HARMONICS AND IMPROVED LINEARITY PERFORMANCE

摘要

A switch element includes a field effect transistor (FET) structure formed on a substrate, the FET structure having a drain, a gate and a source, the drain having a drain capacitance, the gate having a gate capacitance, the source having a source capacitance and an electrical connection to couple the drain capacitance, gate capacitance and the source capacitance to the substrate.;COPYRIGHT KIPO & WIPO 2010