FORMING METHOD FOR PATTERN OF SEMICONDUCTOR DEVICE TO REDUCE STANDING WAVE EFFECT

摘要

PURPOSE: A forming method for pattern of semiconductor device is provided to reduce simplification and manufacturing cost of the manufacturing process.;CONSTITUTION: Provided is the semiconductor substrate(200) in which the etching object film(210) is formed. The reflection barrier layer(230) consisting of the amorphous boron oxynitrogen is formed on the etching object film. The photoresist film is formed on the reflection barrier layer. The exposure process is performed on the photoresist film. The light exposed part of the photoresist film is developed to form the photoresist layer pattern(240a). The reflection barrier layer and etching object film are successively etched by using the photoresist layer pattern as the etching mask.;COPYRIGHT KIPO 2010