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COARSE/FINE PROGRAM VERIFICATION IN NON-VOLATILE MEMORY USING DIFFERENT REFERENCE LEVELS FOR IMPROVED SENSING
COARSE/FINE PROGRAM VERIFICATION IN NON-VOLATILE MEMORY USING DIFFERENT REFERENCE LEVELS FOR IMPROVED SENSING
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机译:使用不同参考水平改进感测的非挥发性记忆体中的粗略/精细程序验证
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摘要
Coarse/fine programming of non-volatile memory is provided in which memory cells are programmed at a first rate of programming prior to reaching a coarse verify level for their intended state and a second rate of programming after reaching the coarse verify level but before reaching the final verify level for their intended state. Large sub-threshold swing factors associated with smaller memory cells can affect the accuracy of sense operations, particularly when sensing at a fine verify level after sensing at a coarse verify level without pre-charging the bit line between the different sensing. Different reference potentials are utilized when sensing at a coarse verify level and a final verify level. The different between the reference potentials can compensate for any discharge of the bit line during the coarse level sensing.;COPYRIGHT KIPO & WIPO 2010
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