ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING THE PROPERTY OF THE ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITHOUT ADDITIONALLY IMPLANTING A DOPANT

摘要

PURPOSE: An electrostatic discharge device and a manufacturing method thereof are provided to reduce resistance between an anode and a cathode of an electrostatic discharge protection device by forming a stack structure to increase a net doping of a guard ring.;CONSTITUTION: A high voltage first conductive well(215) is formed on a semiconductor substrate. A first stack region is formed by successively stacking the first conductive type drift region and the first conductive impurity region. A second stack region is formed by successively stacking a second conductive type drift region and a second conductive impurity region layer on the other region of the high voltage first conductive well. A device isolation layer(220) is formed between the first stack region and the second stack region to isolate the first stack region and the second stack region.;COPYRIGHT KIPO 2010