A method and apparatus for measuring the relative local position error of one of the sections of a in sections exposed object

摘要

It is provided a method for measuring the relative local position error of one of the sections of a in sections exposed object, in particular a lithographic mask or of a wafer, wherein each exposed section has a plurality of measuring marks, in whicha) a region of the object, which is greater than the one section, designed on an enlarged scale and is detected as an image,b) on the basis of the detected image error in the position of the measuring marks contained in the detected image are determined,c) corrected positional errors are derived, in that of the determined positional errors of the measuring marks position error components, which by the enlarged image and detection are caused, be extracted,d) on the basis of the corrected error in the position of the measuring marks of the relative local positional error of the one section is derived.