MOLD FOR UV ASSISTED NANOIMPRINT LITHOGRAPHY AND METHOD FOR MAKING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a mold for nanoimprint lithography assisted by a prescribed wavelength capable of minimizing a distance between two continuing chips.;SOLUTION: This invention relates to the mold for nanoimprint lithography assisted by a prescribed wavelength. The mold includes a layer made of a first material, and the layer includes a layer made of a second rigid material on a first surface and includes a layer made of a third rigid material on the surface opposite side to the first surface, wherein the layer made of the second rigid material has n structured zones (n≥1) of micrometric or nanometric patterns formed in the layer, the layer made of the third rigid material has n recesses opposite to the n structured zones formed in the layer, the n recesses are filled with a fourth material, thereby, n partial regions are formed, the transmittance of the layer of the third material at a determined wavelength λ_det is lower than transmittance of any of the n partial regions, the transmittance of first, second and third material layers at determined wavelength λ_det is such a transmittance that the transmittance of light of the determined wavelength λ_det passing through the first, second and third material layers is lower than arbitrary one of the n partial regions, the layer made of the first material and the layer made of the second material. Further, the invention relates to two methods for making such a mold, too.;COPYRIGHT: (C)2011,JPO&INPIT