Electrode structures for use in integrated circuits, memory cells, a memory device, a memory system, the semiconductor die and electronic systems, as well as methods of forming them

摘要

The electrode structure includes a dielectric layer formed of a first layer of conductive material on a surface of the first layer. Are formed in the dielectric layer, the opening exposes a portion of the surface of the first layer. Formed a dielectric layer above the portion on the exposed surface of the first layer, the second layer of conductive material, the bonding layer is formed on the bond layer. Well, the second layer, the binding layer is a diffusible material in the conductive oxide may be an oxide. This electrode structure can be annealed, it is chemically adsorbed to the bonding layer of the conductive material from the second layer to improve the adhesion of the second interlayer and the first. Programmable cell can be formed by forming a doped glass layer in the electrode structure.