首页> 外国专利> Microelectromechanical systems structures and self-aligned high aspect-ratio combined poly and single-crystal silicon fabrication processes for producing same

Microelectromechanical systems structures and self-aligned high aspect-ratio combined poly and single-crystal silicon fabrication processes for producing same

机译:微机电系统结构及其自对准的高长宽比组合多晶硅和单晶硅制造工艺

摘要

Disclosed are one-port and two-port microelectromechanical structures including variable capacitors, switches, and filter devices. High aspect-ratio micromachining is used to implement low-voltage, large value tunable and fixed capacitors, and the like. Tunable capacitors can move in the plane of the substrate by the application of DC voltages and achieve greater than 240 percent of tuning. Exemplary microelectromechanical apparatus comprises a single crystalline silicon substrate, and a conductive structure laterally separated from the single crystalline silicon substrate by first and second high aspect ratio gaps of different size, wherein at least one of the high aspect ratio gaps has an aspect ratio of at least 30:1, and is vertically anchored to the single crystalline silicon substrate by way of silicon nitride.
机译:公开了一种包括可变电容器,开关和滤波器装置的一端口和两端口微机电结构。高纵横比微加工用于实现低压,大数值可调和固定电容器等。可调电容器可以通过施加直流电压在基板平面内移动,并实现大于240%的调谐。示例性的微机电装置包括单晶硅衬底,以及通过不同尺寸的第一和第二高长宽比间隙从单晶硅基板侧向分离的导电结构,其中至少一个高长宽比间隙的长宽比为0。至少30:1,并通过氮化硅垂直锚固到单晶硅衬底。

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