Inorganic anion exchanger composed of bismuth compound and resin composition for electronic component encapsulation using the same

摘要

A bismuth compound, useful as an inorganic anion exchanger used for an encapsulating material for, e.g., semiconductors, has a peak intensity of 900 to 2000 cps at 2θ=27.9° to 28.1° and a peak intensity of 100 to 800 cps at 2θ=8.45° to 8.55° in a powder X-ray diffraction pattern, and is represented by the following formula (1):Bi(OH)_x(NO₃)_y.nH₂O  (1)wherein x is a positive number not less than 2.5 and less than 3, y is a positive number not more than 0.5, x+y=3, and n is 0 or a positive number.