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Method of growing carbon nanotube and carbon nanotube growing system

机译:生长碳纳米管的方法和碳纳米管生长系统

摘要

When growing carbon nanotubes, a substrate is delivered into a thermal CVD chamber whose internal temperature is a room temperature, and a mixed gas of an inert gas and a raw gas is introduced in the inside thereof. After a pressure inside of the chamber is stabilized at 1 kPa, the temperature in the chamber is raised to 510° C. in 1 minute. As a result, the carbon nanotubes start to grow linearly from the respective catalytic particles without any fusion of each of the catalytic particles.;Subsequently, the temperature and an atmosphere are maintained for about 30 minutes. Once the carbon nanotubes start to grow, surfaces of the catalytic particles are covered by carbon, so that any fusion of each of the catalytic particles can be avoided even during the maintenance for about 30 minutes.
机译:当生长碳纳米管时,将基板输送到内部温度为室温的热CVD室中,并且将惰性气体和粗气体的混合气体引入其内部。在将腔室内的压力稳定在1kPa之后,在1分钟内将腔室内的温度升高至510℃。结果,碳纳米管开始从相应的催化颗粒线性生长,而每个催化颗粒均不熔融。随后,将温度和气氛保持约30分钟。一旦碳纳米管开始生长,催化颗粒的表面就被碳覆盖,从而即使在维持约30分钟的过程中,也可以避免每个催化颗粒的任何融合。

著录项

  • 公开/公告号US7906095B2

    专利类型

  • 公开/公告日2011-03-15

    原文格式PDF

  • 申请/专利权人 AKIO KAWABATA;

    申请/专利号US20080146841

  • 发明设计人 AKIO KAWABATA;

    申请日2008-06-26

  • 分类号D01F9/12;

  • 国家 US

  • 入库时间 2022-08-21 18:09:22

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