METHOD OF SELECTIVELY FORMING ATOMICALLY FLAT PLANE ON DIAMOND SURFACE, DIAMOND SUBSTRATE PRODUCED BY THE METHOD, AND SEMICONDUCTOR ELEMENT EMPLOYING THE SAME

摘要

[Object];The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface.;[Means for Solving Problems];A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.