首页> 外国专利> WEAK SPOT MANAGEMENT METHOD FOR THE SEMICONDUCTOR DEVICE FABRICATION EFFECTING AN INSPECTION OF EVIDENCE THE FIRST WEAK POINT AND THE SECOND WEAK POINT

WEAK SPOT MANAGEMENT METHOD FOR THE SEMICONDUCTOR DEVICE FABRICATION EFFECTING AN INSPECTION OF EVIDENCE THE FIRST WEAK POINT AND THE SECOND WEAK POINT

机译:用于检验第一弱点和第二弱点的证据的半导体器件制造的弱点管理方法

摘要

PURPOSE: After the second model base verification is proceed about the mask lay out in which the weak spot management method for the semiconductor device fabrication is closely revised the light and the second weak point in which the process margin is vulnerable is extracted, the second weak point is back fed in the optical proximity correction and the mask lay out corrected the light nearing is varied.;CONSTITUTION: The mask lay out is designed from design data(S10). The first model base verification is proceed about the mask lay out and the first weak point weaking the process margin off-flavor is extracted(S11). The first weak point is back fed in the mask lay out and the mask lay out is varied(S12).;COPYRIGHT KIPO 2011
机译:目的:在进行第二版模型基础验证后,对掩膜版图进行了修正,在该掩膜版中,对半导体器件制造的弱点管理方法进行了严格修改,并提取了工艺裕度较弱的第二弱点,第二弱点点被反馈到光学邻近校正中,并且校正了掩膜布局,改变了近光。组成:掩膜布局是根据设计数据设计的(S10)。关于掩膜布局进行第一模型基础验证,并提取削弱工艺余量异味的第一弱点(S11)。第一个弱点是在面罩布置中回馈,并且面罩布置有所不同(S12)。; COPYRIGHT KIPO 2011

著录项

  • 公开/公告号KR20100122650A

    专利类型

  • 公开/公告日2010-11-23

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090041653

  • 发明设计人 NAM BYUNG HO;

    申请日2009-05-13

  • 分类号H01L21/027;H01L21/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:53:16

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