BIT LINE PRECHARGE CIRCUIT AND A NONVOLATILE MEMORY DEVICE INCLUDING THE SAME, CAPABLE OF PREVENTING DRASTIC POWER DROP DURING THE BIT LINE PRECHARGE

摘要

PURPOSE: A bit line precharge circuit and a nonvolatile memory device including the same are provided to improve the power drop due to drastic current consumption by precharging the bit line up to a certain level during precharge.;CONSTITUTION: A memory cell array comprises a plurality of cell strings(110, 120). A page buffer(310) is connected through the cell string and bit line of the memory cell array. The page buffer programs the particular data in a memory cell or reads the data stored in the memory cell. The page buffer comprises a bit line selection part(312), a bit line sensing part(316), and a data latch(318).;COPYRIGHT KIPO 2011