Capacitor, FeFET and FeFET type non-volatile memory with ordered ferroelectirc PVDF-TrFE thin film by high throughput epitaxy

摘要

PURPOSE: A capacitor applying an epitaxial crystal growth PVDF-TrFE thin film, an FeFET and an FeFET type nonvolatile memory are provided to be efficiently used as an array of a ferroelectric capacitor by including a low driving voltage and a high temperature processing ability. CONSTITUTION: A bottom electrode is formed on a substrate. A single crystal PTFE film is formed on the upper side of the lower electrode. An epitaxial growth PVDF-TrFE ferroelectric film is formed on the upper side of the single PTFE film. An upper electrode is formed on the upper side of the epitaxial growth PVDF-TrFE ferroelectric film. The single crystal PTFE film is manufactured by a friction transfer process.