STRUCTURE OF LIGHT-EMITTING DEVICE USING THE AVALANCHE METAL-INSULATOR TRANSITION PHENOMENON IN SEMICONDUCTORS

摘要

PURPOSE: the structure of luminescent device, to improve yield rate, is passed through reduction number of plies thin film light emitting device and simplifies manufacturing process using the semiconductor of Avalanche Metal insulator transition phenomenon. ;CONSTITUTION: semiconductor layer, wherein light emitting generation are included in snowslide domain. A buffer layer is formed on substrate. P-type or a n type semiconductor layer are formed on the buffer layer. First electrode layer is formed in the semiconductor layer, on the semiconductor layer. The second electrode lay is formed on the semiconductor layer. ;The 2011 of copyright KIPO submissions