energy conversion device using the phase change memory layer , the memory array and a system containing it , and its manufacturing and how to use

摘要

The phase change is a method for memory element 100 and forms it. The memory element comprises a first 14 and second 22 phase change material layer electrically coupled to the conductive material layer (24). The energy conversion layer 18 is formed is related to the phase change material layer, and the third is electrically connected to the conductive material layer (26). The electrically isolating material layer 17 is formed between the phase change material layer and the energy conversion layer.