Method for measuring e.g. filling degree of mono-crystalline silicon wafer that is utilized in photovoltaic system, involves determining uniformity of facets from normalized difference of reflectance using predefined formula

摘要

The method involves illuminating pyramid facets such that incident light is reflected directly. The reflected light from the facets is received using detectors to generate intensity signals. Reflected light from a wafer base surface is received using the detectors. Filling degree and formation of surface texture are determined from ratio of intensities, and uniformity of the facets are determined from difference and/or normalized difference of facet reflectance using predefined formula, where functions in the formula expresses proportional dependence. An independent claim is also included for an arrangement for measuring filling degree and formation of surface texture of an alkaline corroded wafer.