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Furnace to handle the high purity silicon and how pollution material to determine the amount of impurities contributing to high-purity silicon

机译:处理高纯度硅的熔炉以及如何通过污染材料确定造成高纯度硅的杂质量

摘要

How contaminating material to determine the amount of impurities contributes to high purity silicon, comprising the step of partially enclose a sample of high purity silicon in the contaminating material. Samples that are encapsulated in contaminated material is heated in a furnace. It is compared with the impurity content of the high purity silicon prior to the heating step, the change in the impurity content of the high purity silicon is determined after the heating step. Furnace for heat treating high purity silicon, includes a housing defining a heating chamber. During the heating at the annealing temperature for a period of time sufficient to Yakinamasu high purity silicon, is formed at least in part contributes to low contamination materials in high purity silicon impurities 400ppta below, the housing, the furnace, under the same heating conditions, and contributes to high purity silicon impurities 400ppta than average.
机译:如何用污染材料确定杂质的量有助于形成高纯度硅,包括将高纯度硅样品部分封装在污染材料中的步骤。封装在受污染材料中的样品在炉中加热。将其与加热步骤之前的高纯度硅的杂质含量进行比较,在加热步骤之后确定高纯度硅的杂质含量的变化。用于对高纯度硅进行热处理的炉子,包括限定加热室的壳体。在退火温度下加热足以使Yakinamasu高纯度硅持续一段时间的过程中,在相同的加热条件下,至少部分地形成了低纯度的杂质,杂质在400ppta以下的高纯度硅杂质中,在外壳,熔炉下方,并导致比平均水平高400ppta的高纯硅杂质。

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