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ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION
ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE FABRICATION
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机译:高性能互补金属氧化物半导体(CMOS)器件制造的退火技术
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摘要
A semiconductor structure is provided. In some cases, an absorber having a low deposition temperature is applied to at least a portion of the structure. At least a portion of the structure is subjected to a long flash anneal process.
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