首页> 外国专利> Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same

Method of detecting defects in patterns on semiconductor substrate by comparing second image with reference image after acquiring second image from first image and apparatus for performing the same

机译:从第一图像获取第二图像之后,通过将第二图像与参考图像进行比较来检测半导体基板上的图案中的缺陷的方法及其执行装置

摘要

In a method of detecting defects in patterns and an apparatus for performing the method, a first image of a detection region on a semiconductor substrate may be acquired. A second image may be acquired from the first image by performing a Fourier transform and performing a low pass filtering. The second image may be compared with a reference image so that the defects of the detection region are detected. Existence of the defect of the second image is determined using a relation value between a grey level of each of pixels of the second image and the reference image, respectively. When a defect exists, the horizontal and the vertical positions of the pixel where the relation value is minimum are combined to determine the position of the defect.
机译:在检测图案中的缺陷的方法和用于执行该方法的设备中,可以获取半导体基板上的检测区域的第一图像。通过执行傅立叶变换并执行低通滤波,可以从第一图像获取第二图像。可以将第二图像与参考图像进行比较,从而检测出检测区域的缺陷。分别使用第二图像的每个像素的灰度级与参考图像之间的关系值来确定第二图像的缺陷的存在。当存在缺陷时,将关系值最小的像素的水平和垂直位置进行组合以确定缺陷的位置。

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