首页>
外国专利>
ESD protection design with turn-on restraining method and structures
ESD protection design with turn-on restraining method and structures
展开▼
机译:具有导通抑制方法和结构的ESD保护设计
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.
展开▼