首页> 外国专利> A FULLY INTEGRATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) FOURIER TRANSFORM INFRARED (FTIR) SPECTROMETER AND RAMAN SPECTROMETER

A FULLY INTEGRATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) FOURIER TRANSFORM INFRARED (FTIR) SPECTROMETER AND RAMAN SPECTROMETER

机译:完全集成的互补金属氧化物半导体(CMOS)傅里叶变换红外光谱仪(FTIR)和拉曼光谱仪

摘要

A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOStechnology on aSilicon-on-Insulator (SOI) wafer is disclosed. The present invention is fullyintegrated into acompact, miniaturized, low cost, CMOS fabrication compatible chip. The presentinventionmay be operated in various infrared regions ranging from 1.1 µm to 15 µmor it can cover thefull spectrum from 1.1 µm to 15 µm all at once.The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, nomovableparts, no lenses, is compact, not prone to damage in harsh external conditionsand can befabricated with a standard CMOS technology, allowing the mass production ofFTIRspectrometers. The fully integrated CMOS-FTIR spectrometer is suitable forbatteryoperation; any and all functionality can be integrated on a chip with standardCMOStechnology. The disclosed invention for the FTIR spectrometer may also beadapted for aCMOS-Raman spectrometer.
机译:集成在CMOS中的傅立叶变换红外(FTIR)光谱仪技术上公开了绝缘体上硅(SOI)晶片。本发明是完全的集成到紧凑,小型化,低成本,CMOS制造兼容芯片。现在发明可以在1.1 µm至15 µm的各种红外区域中操作或者它可以覆盖全光谱范围从1.1 µm到15 µm。本文公开的CMOS-FTIR光谱仪具有高光谱分辨率,没有活动零件,没有镜片,结构紧凑,在恶劣的外部条件下不容易损坏并且可以是采用标准CMOS技术制造,可以批量生产红外光谱光谱仪。完全集成的CMOS-FTIR光谱仪适用于电池操作任何和所有功能都可以与标准芯片集成CMOS技术。 FTIR光谱仪的公开发明也可以是适用于CMOS拉曼光谱仪。

著录项

  • 公开/公告号CA2768225A1

    专利类型

  • 公开/公告日2012-05-24

    原文格式PDF

  • 申请/专利权人 LUXMUX TECHNOLOGY CORPORATION;

    申请/专利号CA20122768225

  • 发明设计人 YADID-PECHT ORLY;DATTNER YONATHAN;

    申请日2012-02-15

  • 分类号G01J3/12;G01J3/433;G01J3/44;G02B6/12;G02B27/10;H01L31/16;

  • 国家 CA

  • 入库时间 2022-08-21 17:20:31

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