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METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION CAPABLE OF PREVENTING CONTAMINATION AND ENHANCING FILM GROWTH RATE
METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION CAPABLE OF PREVENTING CONTAMINATION AND ENHANCING FILM GROWTH RATE
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机译:具有防止污染和提高膜生长速度的化学气相沉积的方法和装置
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摘要
Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material. Besides, the invention provides an apparatus for CVD including a susceptor located in a reaction chamber producing a vacuum, on which substrates are placed and a film deposition process is made, the apparatus comprising: a reactive gas confining means, established over the susceptor, having at least a source material supply port through which a source material is supplied and a plurality of openings perforated on a surface thereof; a purge gas supply port through which a purge gas is fed into an outside of the reactive gas confining means; and an exhaust port for discharging exhaust gasses generated in the reaction chamber.
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