MANUFACTURING METHOD OF ULTRA-LOW DIELECTRIC MEMBRANE CONTAINING NANO PORES, HAVING EXCELLENT MECHANICAL STRENGTH AND LOW DIELECTRIC CONSTANT

摘要

PURPOSE: A manufacturing method of ultra-low dielectric membrane is provided to impart mechanical strength required for low dielectric membrane, and to provide extremely low dielectric constant, and to be used as an inter-layer insulative film for a semiconductor.;CONSTITUTION: A manufacturing method of ultra-low dielectric membrane is manufactured by heat curing using an organic or inorganic matrix, and a reactive pore-former. The ultra-low dielectric membrane is manufactured by irradiation with UV rays of 200-300 nm at 400-450 °C for 5-30 minutes conducted with the heat curing at the same time. The matrix consists of 10-90 vol% of polymethylsilsesquioxane precursor or a copolymer thereof, and 10-90 vol% of a pore forming template in chemical formula 1: R1OCH2[CH(OR2)]nCH2OR3. In chemical formula 1, R1, R2, and R3 is respectively hydrogen, or A. A is R4Si(OR5)3, R4 and R5 is respectively a C1-5 alkyl group, and n is an integer from 2-4.;COPYRIGHT KIPO 2012