METHODS OF FORMING GROUP III NITRIDE MATERIALS AND STRUCTURES FORMED THEREFROM

摘要

Embodiments of the invention include methods for forming a group III nitride semiconductor structure using a halide vapor phase epitaxy (HVPE) process. The methods include forming a continuous group III nitride nucleating layer on a surface of a non-native growth substrate, the continuous group III nitride nucleating layer concealing the upper surface of the non-native growth substrate. The formation of the continuous group III nitride nucleation layer may include the formation of a Group III nitride layer and the heat treatment of said Group III nitride layer. Methods may further include forming an additional Group III nitride layer on the continuous Group III nitride nucleation layer