Matrix layers improved for the depot hetecouches improved matrix for the depot heteroepitaxial of semiconductor materials of the nitride (iii) by using hvpe.

摘要

The deposition methods of semiconductor materials of nitride iii on substrates include the deposition of a layer of semiconducting material iii nitride on a surface of a substrate in a step of nucleation of the process, hvpe to form a nucleation layer having a microstructure comprising at least one semiconductor material of nitride, amorphous iii. The nucleation layer may be annealed in order to form clusters of the material of crystal nucleation used on the surface of the substrate. The clusters of the material of the epitaxial nucleation can grow and merge in a step of coalescence of the process, hvpe to form a matrix layer of nucleation of the material of the epitaxial nucleation. The matrix layer of nucleation can largely cover the surface of the substrate. A semiconductor material of the additional nitride iii may be deposited on the matrix layer of nucleation of the material of nucleation used in another step of the process, hvpe. The final and intermediate structures comprising the semiconductor material of the nitride (iii) are formed by such methods.