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SEMICONDUCTOR DEVICE, INVERTER USING THE SAME, CONVERTER USING THE SAME, AND POWER CONVERSION APPARATUS USING THE SAME
SEMICONDUCTOR DEVICE, INVERTER USING THE SAME, CONVERTER USING THE SAME, AND POWER CONVERSION APPARATUS USING THE SAME
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机译:半导体装置,使用相同的变频器,使用相同的变频器,以及使用相同的功率转换装置
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摘要
PROBLEM TO BE SOLVED: To provide a semiconductor device with a small variation in characteristics.;SOLUTION: A semiconductor device includes a first switching element (a high-withstand-voltage transistor Q1) and a second switching element (a resistive element R1 and a low-withstand-voltage transistor Q2) that are connected in series between nodes N1 and N2, and a third switching element (a low-withstand-voltage transistor Q3) that is connected in parallel to the second switching element. When the transistor Q2 is turned on, the transistor Q1 turns on, and then when the transistor Q3 is turned on, a conductive state is established between the nodes N1 and N2. As a result, the first switching element having a high on-resistance value is turned on, and then the high-withstand-voltage transistor Q1 is turned on, thereby reducing the variation in turn-on time.;COPYRIGHT: (C)2013,JPO&INPIT
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