首页> 外国专利> SEMICONDUCTOR DEVICE, INVERTER USING THE SAME, CONVERTER USING THE SAME, AND POWER CONVERSION APPARATUS USING THE SAME

SEMICONDUCTOR DEVICE, INVERTER USING THE SAME, CONVERTER USING THE SAME, AND POWER CONVERSION APPARATUS USING THE SAME

机译:半导体装置,使用相同的变频器,使用相同的变频器,以及使用相同的功率转换装置

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a small variation in characteristics.;SOLUTION: A semiconductor device includes a first switching element (a high-withstand-voltage transistor Q1) and a second switching element (a resistive element R1 and a low-withstand-voltage transistor Q2) that are connected in series between nodes N1 and N2, and a third switching element (a low-withstand-voltage transistor Q3) that is connected in parallel to the second switching element. When the transistor Q2 is turned on, the transistor Q1 turns on, and then when the transistor Q3 is turned on, a conductive state is established between the nodes N1 and N2. As a result, the first switching element having a high on-resistance value is turned on, and then the high-withstand-voltage transistor Q1 is turned on, thereby reducing the variation in turn-on time.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供一种特性变化小的半导体器件。解决方案:半导体器件包括第一开关元件(高耐压晶体管Q1)和第二开关元件(电阻元件R1和A)。串联连接在节点N1和N2之间的低耐压晶体管Q2和与第二开关元件并联连接的第三开关元件(低耐压晶体管Q3)。当晶体管Q2导通时,晶体管Q1导通,然后当晶体管Q3导通时,在节点N1和N2之间建立导通状态。结果,具有高导通电阻值的第一开关元件导通,然后高耐压晶体管Q1导通,从而减小了导通时间的变化。;版权所有:(C)2013 ,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号