Electroforming free memristor and method for fabricating thereof

摘要

An electroforming free memristor includes a first electrode, a second electrode spaced from the first electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material and reactive particles that are to react with the switching material during a fabrication process of the memristor to form one or more conductance channels in the switching layer.