HEMISPHERICAL MICROSTRUCTURE ARRAYS FOR GAN-BASED LIGHT EMITTING DIODES AND METHOD FOR FORMING THE ARRAYS

摘要

There is provided a method for forming hemispherical microstructure arrays for GaN-based light emitting diodes. The method includes generating a row of discrete droplets of a pre-determined mixture on a rod when the rod is subjected to gravitational and surface forces; lowering of the rod to a first surface of a substrate; and transferring the row of discrete droplets onto the first surface when the rod is in close proximity to the first surface for the droplets to contact with the first surface. A GaN-based light emitting diode, using a substrate with the hemispherical microstructure arrays is also provided.