MICROWAVE BIAS-TEE USING LUMPED ELEMENT WITH WIDEBAND CHARACTERISTIC FOR HIGH POWER AMPLIFIER

摘要

PURPOSE: A micro wave bias tee for a high power amplifier is provided to stably supply a bias of the high power amplifier. CONSTITUTION: First to third lines(TL1,TL2,TL3) are connected between RF+DC port and an RF port in series. A wideband DC block is placed between the second and the third lines. A fourth lint(TL4) is vertically branched between the first and the second lines to be connected. A wideband RF chock is connected between the fourth line and a DC power supply. The DC block is composed of a parallel adding circuit of a capacitor. The RF chock is composed of a serial adding circuit of an inductor. [Reference numerals] (AA) Wideband DC block; (BB) Wideband RF chock