首页> 外国专利> OXYNITRIDE PHOSPHORS CAPABLE OF IMPROVING LIGHT UNIFORMITY AND DISTRIBUTION, AND A LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME

OXYNITRIDE PHOSPHORS CAPABLE OF IMPROVING LIGHT UNIFORMITY AND DISTRIBUTION, AND A LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME

机译:能够改善光均匀性和分布的氧合磷酸盐,以及包括相同封装的发光二极管封装

摘要

PURPOSE: An oxynitride phosphor is provided to have excellent thermal performance and light efficiency, to have a small change even under high temperature and high humidity, and to obtain a white light emitting diode by a blue phosphor.;CONSTITUTION: An oxynitride phosphor includes a crystal represented by chemical formula: : M_(3-x)A_2Si_3O_9N_2 : RE^(3+)_x where 0.01=x=0.3 and M is a trivalent metal. A light emitting diode(100) comprises a first semiconductor layer(122); a second semiconductor layer(126); an active material layer arranged between the first semiconductor layer and second semiconductor layer; a light emitting structure(120) emitting light with a main peak of 300-400 nm; and a phosphor layer(130) which is arranged on one side of the light emitting structure and generates light with a main peak of 400-550 nm. The phosphor layer comprises the oxynitride phosphor.;COPYRIGHT KIPO 2013
机译:用途:提供一种氮氧化物荧光粉,以使其具有出色的热性能和光效率,即使在高温和高湿度下也具有很小的变化,并通过蓝色荧光粉获得白色发光二极管。化学式表示的晶体:M_(3-x)A_2Si_3O_9N_2:RE ^(3 +)_ x其中0.01 <= x <= 0.3,M为三价金属。发光二极管(100)包括第一半导体层(122);第二半导体层(122)。第二半导体层(126);活性材料层设置在第一半导体层和第二半导体层之间;发光结构(120),其发射具有300-400nm主峰的光;荧光体层(130),其布置在发光结构的一侧并产生具有400-550nm主峰的光。荧光粉层包括氮氧化物荧光粉。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20130057305A

    专利类型

  • 公开/公告日2013-05-31

    原文格式PDF

  • 申请/专利权人 LG INNOTEK CO. LTD.;

    申请/专利号KR20110123141

  • 发明设计人 MOON JI WOOK;KANG HEE SANG;KANG HYUN GOO;

    申请日2011-11-23

  • 分类号C09K11/77;C09K11/79;C09K11/80;H01L33/00;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:03

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