SILICON CARBIDE SINGLE CRYSTAL GROWING METHOD CAPABLE OF IMPROVING THE YIELD OF A SINGLE CRYSTAL

摘要

PURPOSE: A silicon carbide single crystal growing method is provided to suppress the growth of a poly crystal by attaching a piece of a single crystal on a part without a seed in a seed holder.;CONSTITUTION: A seed is prepared(S100). The seed is attached to a seed holder(S110). A piece of a single crystal is attached to the seed holder(S120). The seed holder is mounted on one inner surface of a crucible(S130). Single crystal materials are loaded inside the crucible(S140). Impurities included in the crucible are removed(S150). Air remaining in the crucible is removed(S160). The single crystal is grown(S170).;COPYRIGHT KIPO 2013;[Reference numerals] (S100) Prepare a seed; (S110) Attach the seed to a seed holder; (S120) Attach a piece of a single crystal to the seed holder; (S130) Mount the seed holder in a crucible; (S140) Load single crystal materials inside the crucible; (S150) Remove impurities in the crucible; (S160) Remove air; (S170) Grow the single crystal