SUBSTRATE PROCESSING METHOD AND A SUBSTRATE PROCESSING APPARATUS, CAPABLE OF REDUCING RUNNING COSTS AND UNIFORMLY ETCHING A SUBSTRATE

摘要

PURPOSE: A substrate processing method and a substrate processing apparatus are provided to reduce the consumption of solvent vapor and etching vapor by raising the concentration of hydrogen fluoride to an etching concentration by using the etching vapor.;CONSTITUTION: A substrate is inputted to a processing unit (S1). IPA vapor or DIW vapor is supplied to the substrate (S2). HF vapor is supplied to the substrate (S3). The substrate is outputted from the processing unit (S4).;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Start; (BB) Finish; (S1) Input a substrate; (S2) Form a liquid film (IPA vapor or DIW vapor); (S3) Etching (HF vapor); (S4) Output a substrate