首页> 外国专利> SEMICONDUCTOR CHIP CAPABLE OF IMPROVING A DEGREE OF INTEGRATION AND A SIGNAL TRANSFER CHARACTERISTIC, AND A THIRD-DIMENSIONAL LAMINATED CHIP AND A THIRD-DIMENSIONAL LAMINATED CHIP PACKAGE

SEMICONDUCTOR CHIP CAPABLE OF IMPROVING A DEGREE OF INTEGRATION AND A SIGNAL TRANSFER CHARACTERISTIC, AND A THIRD-DIMENSIONAL LAMINATED CHIP AND A THIRD-DIMENSIONAL LAMINATED CHIP PACKAGE

机译:能够改善集成度和信号传输特性的半导体芯片,以及三维叠片和三维叠片封装

摘要

PURPOSE: A semiconductor chip, a third-dimensional laminated chip and a third-dimensional laminated chip package are provided to increase structural stability and electrical performance of coaxial through silicon via by forming a graphene film between a first via part and an insulation part and between an insulation part and a second via part.;CONSTITUTION: An active layer (130) is formed in one side of a substrate (110). Multiple passive devices (140) are laminated on the other side of substrate. Multiple coaxial through silicone vias (120) are formed through the substrate. The multiple coaxial through silicone vias are electrically connected the passive device and the active layer. The coaxial through silicone via comprises a first via part (121), a second via part (122), and an insulation part (123).;COPYRIGHT KIPO 2013
机译:目的:提供半导体芯片,第三维层压芯片和第三维层压芯片封装,以通过在第一通孔部分和绝缘部分之间以及之间形成石墨烯膜来增加同轴通硅通孔的结构稳定性和电性能。组成:有源层(130)形成在衬底(110)的一侧。多个无源器件(140)被层压在衬底的另一侧。穿过衬底形成多个同轴通硅通孔(120)。多个同轴通硅通孔电连接无源器件和有源层。同轴硅通孔包括第一通孔部分(121),第二通孔部分(122)和绝缘部分(123).; COPYRIGHT KIPO 2013

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