Method for defining design rules to design field plates of structures of semiconductor transistors in integrated circuit, involves carrying out longitudinal extension of field plates against reverse voltage corresponding to field plates

摘要

The method involves defining experimental or simulation determined measures for a source-side poly field plate (20) over an active area, a drain-side poly field plate (28) over another active area, source-side metal field plates and drain-side metal field plates from measures of plates of highest blocking transistors. Slopes of empirical lines are determined using the measures of the plates of the highest transistors for the filed plates. Longitudinal extension of the field plates against reverse voltage is carried out corresponding to the field plates.