首页> 外国专利> Semiconductor device includes semiconductor chip that includes upper and lower contact plates which are integrally connected to upper chip metallization and lower chip metallization by upper and lower connecting layers

Semiconductor device includes semiconductor chip that includes upper and lower contact plates which are integrally connected to upper chip metallization and lower chip metallization by upper and lower connecting layers

机译:半导体器件包括半导体芯片,该半导体芯片包括上和下接触板,该上和下接触板通过上和下连接层一体地连接到上芯片金属化层和下芯片金属化层

摘要

The semiconductor device has a semiconductor chip (1) that includes a semiconductor main structure (10) having an upper surface (10t) and lower surface (10b). The upper chip metallization (11) and lower chip metallization (12) are applied to the upper surface and lower surface respectively. A metallic upper contact plate (21) is integrally connected to the upper chip metallization by upper connecting layer (31). A lower contact plate (22) is integrally connected to the lower chip metallization by lower connecting layer (32). Independent claims are included for the following: (1) a pressing contact arrangement of semiconductor chip; and (2) a method for manufacturing semiconductor device.
机译:该半导体器件具有半导体芯片(1),该半导体芯片(1)包括具有上表面(10t)和下表面(10b)的半导体主结构(10)。上切屑金属化层(11)和下切屑金属化层(12)分别施加到上表面和下表面。金属上接触板(21)通过上连接层(31)一体地连接到上芯片金属化层。下接触板(22)通过下连接层(32)一体地连接到下芯片金属化层。以下内容包括独立权利要求:(1)半导体芯片的压接装置; (2)半导体装置的制造方法。

著录项

  • 公开/公告号DE102012202281A1

    专利类型

  • 公开/公告日2013-08-22

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE201210202281

  • 发明设计人 HOHLFELD OLAF;

    申请日2012-02-15

  • 分类号H01L23/48;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-21 16:21:46

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