首页> 外国专利> SEMICONDUCTOR CIRCUIT, DA CONVERTER, MIXER CIRCUIT, RADIO COMMUNICATION DEVICE, THRESHOLD VOLTAGE ADJUSTING METHOD, TRANSISTOR QUALITY DETERMINING METHOD

SEMICONDUCTOR CIRCUIT, DA CONVERTER, MIXER CIRCUIT, RADIO COMMUNICATION DEVICE, THRESHOLD VOLTAGE ADJUSTING METHOD, TRANSISTOR QUALITY DETERMINING METHOD

机译:半导体电路,DA转换器,混频器电路,无线电通信设备,阈值电压调整方法,晶体管质量确定方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor circuit, DA converter, mixer circuit, radio communication device, threshold voltage adjusting method and transistor quality determining method that, after adjusting their characteristics, can prevent their characteristics from changing again by operation.;SOLUTION: A semiconductor circuit of an embodiment includes a substrate, a tunnel oxide film, electric charge storage film, block layer, and a plurality of nodes. The substrate is made up of semiconductor on which two diffusion zones that will be any of a source or drain are formed. The tunnel oxide film is formed on a region between the diffusion zones of the substrate. The electric charge storage film is formed on the tunnel oxide film and stores electric charges. The block layer is formed between the electric charge storage film and a gate electrode, and a first oxide film, nitride film and second oxide film are stacked such that the thickness of its layer will be 5 nm or more and 15 nm or less. The plurality of nodes are made to be able to apply voltage from the outside so that the source and drain will be switched, and to be able to detect gate voltage, drain current, and substrate current.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:提供一种半导体电路,DA转换器,混频器电路,无线电通信设备,阈值电压调整方法和晶体管质量确定方法,在调整它们的特性之后,可以防止它们的特性因操作而再次改变。实施例的半导体电路包括衬底,隧道氧化物膜,电荷存储膜,阻挡层和多个节点。衬底由半导体制成,在其上形成将成为源极或漏极中的任何一个的两个扩散区。隧道氧化膜形成在基板的扩散区域之间的区域上。电荷存储膜形成在隧道氧化膜上并存储电荷。阻挡层形成在电荷存储膜和栅电极之间,并且以其层的厚度为5nm以上且15nm以下的方式层叠第一氧化物膜,氮化物膜和第二氧化物膜。使多个节点能够从外部施加电压,以便切换源极和漏极,并能够检测栅极电压,漏极电流和衬底电流。;版权所有:(C)2014,JPO&INPIT

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