Film forming method, film forming apparatus, a piezoelectric film, a piezoelectric element, a liquid ejection apparatus, and a piezoelectric ultrasonic transducer

摘要

PROBLEM TO BE SOLVED: To provide a film formation method capable of sophisticatedly unifying the film characteristic such as the composition in the in-plane direction irrespective of the composition of a film to be deposited and the size of a substrate.;SOLUTION: When a film containing constituent elements of a target T is formed on a substrate B through a vapor deposition process using plasma with placing the substrate B and the target T to face each other, the potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate B is controlled to be equal to the potential on the substrate B, and/or the substrate B is surrounded with a wall surface 10S having the potential controlled to be equal to the potential on the substrate B.;COPYRIGHT: (C)2010,JPO&INPIT