Semiconductor laser and electric field absorption die modulator integration distribution feedback die laser

摘要

PPROBLEM TO BE SOLVED: To provide an element achieving high output even at high temperatures, in regard to a distributed feedback semiconductor laser or Fabry-Perot laser with an oscillation wavelength of 1.290-1.350 μm. PSOLUTION: The semiconductor laser includes an active layer 2 having a multi quantum well structure of an InGaAlAs material excellent in high output power at high temperatures on an InP substrate, with its barrier layer optimal values (x value and y value of InSB(1-x-y)/SBGaSB(x)/SBAlSB(y)/SBAs) being in the range of 0.19x0.27 and 0.31y0.39 simultaneously. PCOPYRIGHT: (C)2011,JPO&INPIT