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The sample stand where the minute region analytical device which uses the focus ion beam and the minute region analytical methodological null

机译:样品架上使用聚焦离子束的微小区域分析装置和微小区域分析方法无效

摘要

PROBLEM TO BE SOLVED: To simply, quickly, and precisely measure a temperature of an analyzed part on a sample surface in analyzing behaviors of elements in the analyzed part on the sample surface.SOLUTION: In the minute part analyzer using the focused ion beam, Ga whose ion kind is Ga is poured on a surface of a sample 4 by pre-radiating Ga focused ion beam 3 to make it a reference element for measuring a surface temperature of the sample 4, and the temperature of the minute part on the surface of the sample 4 during analysis is determined. Yield of a secondary Ga ion emitted from the sample 4 is measured by pre-radiating the fixed amount of Ga focused ion beam 3 to the sample 4 at every appropriate surface temperature of the sample 4 in advance to obtain a relation of the yield of the secondary Ga ion with the surface temperature of the sample 4. Once this relation is examined, the temperature at the minute part on the surface of the sample 4 can be determined by measuring the yield of the secondary Ga ion when analyzing the plurality of samples 4.
机译:解决的问题:在分析样品表面上被分析零件中元素的行为时,为了简单,快速,精确地测量样品表面上被分析零件的温度。解决方案:在使用聚焦离子束的微小零件分析仪中,通过预辐射Ga聚焦的离子束3,将离子种类为Ga的Ga倾倒在样品4的表面上,使其成为用于测量样品4的表面温度以及表面上的微小部分的温度的参考元素。确定分析过程中样品4的浓度。通过预先在样品4的每个合适的表面温度下向样品4预辐射固定量的Ga聚焦离子束3,来测量从样品4发出的二次Ga离子的产率,以获得样品的产率的关系。二次Ga离子与样品4的表面温度的关系。一旦检查了这种关系,就可以通过在分析多个样品4时测量二次Ga离子的产率来确定样品4表面上微小部分的温度。 。

著录项

  • 公开/公告号JP5381916B2

    专利类型

  • 公开/公告日2014-01-08

    原文格式PDF

  • 申请/专利权人 新日鐵住金株式会社;

    申请/专利号JP20100152290

  • 发明设计人 林 俊一;久保田 直義;

    申请日2010-07-02

  • 分类号G01N23/225;H01J49/10;

  • 国家 JP

  • 入库时间 2022-08-21 16:10:47

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