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Memristive junction with intrinsic rectifier

机译:带有本征整流器的忆阻结

摘要

A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
机译:忆阻结( 400 )可以包含第一电极( 102 )和第二电极( 104 ),以及忆阻区( 106 )位于它们之间。忆阻区域被配置为通过施加在电极之间的切换电压( 118 )在两个激活状态之间切换。可以通过在第一电极和第二电极之间施加读取电压来确定激活状态。该结还包括位于第一电极和忆阻区之间的界面( 420 )的整流器区域,并包括温度响应性过渡材料层( 402 )它在开关电压下基本导通,而在读取电压下基本电阻。

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